| PART |
Description |
Maker |
| JANSR2N7408 FN4637 |
Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant,N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSR1110R FSR1110D FN4828 FSR1110R4 FSR1110D1 FSR11 |
From old datasheet system
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FSYA9150R FSYA9150D FN4582 FSYA9150R4 FSYA9150D1 F |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FSYC264R4 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 34 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| MX043G MX043J MX043 |
Radiation Hardended MOSFET
RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
MICROSEMI[Microsemi Corporation]
|
| FSYC360D FSYC360R4 FSYC360D1 FSYC360R FSYC360R3 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSPS230R4 FSPS230D1 FSPS230F FSPS230F3 FSPS230F4 F |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSS913A0R4 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSYE23A0R4 FSYE23A0D FSYE23A0D1 FSYE23A0D3 FSYE23A |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 8 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRHLUB7930Z4 IRHLUB7970Z410 JANSR2N7626UB |
RADIATION HARDENED
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
|
International Rectifier
|
